Fig. 1. Structural diagrams of absorber. (a) Three-dimensional view of unit cell; (b) top view of unit cell

Fig. 2. Effects of structural parameters of absorber on absorption characteristics. (a) Dielectric layer VO2 thickness h2; (b) nano-pillar side length d3; (c) nano-pillar side length d1; (d) nano-pillar side length d2; (e) top W film thickness h1; (f) period T; (g) distance L1 between nano-pillar with side length d1 and center line of unit; (h) distance L2 between nano-pillar with side length d2 and center line of unit

Fig. 3. Absorptivity of absorber versus temperature

Fig. 4. Magnetic field distributions of the X-Y section of the absorber at the center of VO2 dielectric layer (Z=0.25 μm). (a) 20 ℃, λ=3 μm; (b) 20 ℃, λ=4 μm; (c) 20 ℃, λ=5 μm; (d) 80 ℃, λ=3 μm; (e) 80 ℃, λ=4 μm; (f) 80 ℃, λ=5 μm

Fig. 5. Absorptivity of the absorber at 20 °C. (a) Different polarization angles; (b) different incident angles for TM polarization and TE polarization