Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm

Frank Mehnke; Christian Kuhn; Martin Guttmann; Luca Sulmoni; Verena Montag; Johannes Glaab; Tim Wernicke; Michael Kneissl

doi:10.1364/PRJ.414315

Photonics Research, Volume. 9, Issue 6, 1117(2021)

Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm

Frank Mehnke^1,3、*, Christian Kuhn¹, Martin Guttmann¹, Luca Sulmoni¹, Verena Montag¹, Johannes Glaab², Tim Wernicke¹, and Michael Kneissl^1,2

Author Affiliations

¹Institute of Solid State Physics, Technische Universität Berlin, 10623 Berlin, Germany

²Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

³Current address: School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

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Frank Mehnke, Christian Kuhn, Martin Guttmann, Luca Sulmoni, Verena Montag, Johannes Glaab, Tim Wernicke, Michael Kneissl. Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm[J]. Photonics Research, 2021, 9(6): 1117

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Paper Information

Category: Optoelectronics

Received: Nov. 9, 2020

Accepted: Mar. 21, 2021

Published Online: Jun. 1, 2021

The Author Email: Frank Mehnke (frank.mehnke@ece.gatech.edu)

DOI:10.1364/PRJ.414315

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