[1] [1] Chen ZhiMing, Pu Hongbing,Fred R. et al. A light-activated SiC darlington transistor using SiCGe as base layer. Chin Phys Lett, 2003,20 ( 3 ): 430 ～ 432

[2] [2] Katulka G, Roe K, Kolodzey J, et al. The electrical characteristics of silicon carbide alloyed with germanium.Applied Surface Science, 2001, (175-176): 505 ～511

[3] [3] Pankov J I. Optical Processes in Semiconductors. Englewood Clifts, Prentice-Hall, 1971.38

[4] [4] Solangi A M I. Absorption coefficient of a - SiC grown by chemical vapor deposition. J Mater Res, 1991,7 (3) :539 ～544

[5] [5] Braunstein R, Moore A R, Herman F. Intrinsic optical absorption in germanium-silicon alloys. Phys Rev, 1958,109(3): 695 ～710

[6] [6] Orner B A,Kolodzey J. Si1-x-yGexCy alloy band structures by linear combination of atomic orbitals. J Appl Phys, 1997,81(10): 6773 ～6780