Acta Photonica Sinica, Volume. 31, Issue 3, 308(2002)
THE X-RAY DIFFRACTION STUDY ON THE INTERFACE OF AlGaAs BUFFER LAYER AND GaAs ACTIVE LAYER OF THE TRANSPARENT GaAs PHOTOCATHODE
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[4] [4] van der Sluis P.Determination of strain in epitaxial semiconductor structures by high-resolution X-ray diffraction.Appl Phys,1994,A58(1):129～134
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE X-RAY DIFFRACTION STUDY ON THE INTERFACE OF AlGaAs BUFFER LAYER AND GaAs ACTIVE LAYER OF THE TRANSPARENT GaAs PHOTOCATHODE[J]. Acta Photonica Sinica, 2002, 31(3): 308
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