Acta Optica Sinica, Volume. 43, Issue 19, 1900001(2023)

Development and Challenges of Lithographical Alignment Technologies

Jun Qiu1,2, Guanghua Yang1, Jing Li1,2、*, Zengxiong Lu1,2, and Minxia Ding1
Author Affiliations
  • 1Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(38)
    Evolution route of alignment technologies of ASML, Nikon, and Canon
    Schematic diagram of phase grating alignment (PGA) method[39]
    Schematic diagram of TTL alignment technology[41]
    Schematic diagram of XPA mark composed of four gratings[43]
    Curve of normalized ±1 order diffraction light alignment signal strength versus slot depth in TTL alignment technology[14]
    Schematic diagram of ATHENA[45]
    Schematic diagram of diffraction stage separation in ATHENA[40]
    Curve of normalized ±1-±7 order diffraction light alignment signal strength versus slot depth in ATHENA[14,47]. (a) Normalized alignment signal strength corresponding to each wavelength; (b) maximum normalized alignment signal strength
    Schematic diagram of ATHENA mark[43]
    Schematic diagram of SPM mark improvement[3]. (a) Schematic diagram of SSPM-X mark (Image rotated by 90° is SSPM-Y mark); (b) schematic diagram of NSSM-X mark (Image rotated by 90° is NSSM-Y mark)
    Schematic diagram of SMASH[39,53]
    Schematic diagram of interferometer module structure in SMASH[53]
    Schematic diagram of SMASH mark[3]
    Basis of D4C software evaluation and screening marks[60-61]
    Flow chart of D4C software design marking[57]
    Type of mark and segmented method[61]. (a) Unsegmented mark; (b) scan direction segmented mark; (c) non-scan direction segmented mark; (d) scan direction and non-scan direction segmented marks; (e) inclined segmented mark
    Mark asymmetric deformation resulting in position error[57]. (a) Schematic diagram of marking symmetry; (b) schematic diagram of marking asymmetry
    Schematic diagram of OCW method[63]
    Simulation results of filtering effect of WAMM model mapping matrix M[64]
    Schematic diagram of LSA. (a) Three-dimensional diagram[23] ; (b) schematic diagram of X direction[24]
    LSA mark[24]. (a) Search mark-X; (b) search mark-Y; (c) EGA mark-X; (d) EGA mark-Y
    Schematic diagram of FIA[22]
    FIA mark[73]. (a) Search mark; (b) EGA mark
    Schematic diagram of LIA[22]
    Schematic diagram of TTL alignment technology[31]
    Schematic diagram of TTL alignment mark[31]
    Schematic diagram of OAL for single stage lithography machine[34]
    OAL alignment mark. (a) Cross alignment mark[77]; (b) long strip alignment mark[78]
    Multi grating alignment system[79]. (a) Structure diagram of alignment system; (b) structure diagram of alignment mark
    Reflection-style alignment optical path based on Moiré fringes[16]
    Four-quadrant gratings Moiré fringe alignment mark[81]. (a) Silicon wafer grating mark; (b) mask grating mark
    Simultaneous multi-channel absolute position alignment by multi-order grating interferometry[89]
    Principle diagram of self-coherence Moiré fringe alignment technology[21]
    Comparison diagram of diffraction efficiency of each mark[92]. (a) AH11; (b) AH53; (c) IME3; (d) IME5
    • Table 1. Characteristics of alignment technologies of ASML, Nikon, and Canon

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      Table 1. Characteristics of alignment technologies of ASML, Nikon, and Canon

      CompanyTechnologyLight sourceRelationship between optical path and exposure systemCharacteristic
      ASMLThrough-the-lens(TTL)633 nm laserCoaxial

      High signal-to-noise ratio;

      good process stability

      Advanced technology using high-order enhanced alignment(ATHENA)532 and 633 nm laserOff-axis

      Good process stability;

      mitigate interference cancellation;strong robustness

      Smart alignment sensor hybrid(SMASH)532,633,780,and 850 nm laserOff-axisInsensitivity to even aberrations;no reference grating;larger numerical aperture(NA);simultaneous alignment in X/Y direction
      Multi wavelength and high process adaptive alignment(ORION)12 wavelength laserOff-axis

      More measurement channels;

      strong system stability;

      less impact due to asymmetry

      NikonLaser step alignment(LSA)633 nm laserCoaxial

      High sensitivity;

      high recognition ability

      Field image alignment(FIA)Halogen lampOff-axisMitigate interference cancellation;simultaneous alignment in X/Y direction
      Laser interferometer alignment(LIA)633 nm laserCoaxialOptical heterodyne interferometry;large lighting area;less impact due to coarse particles
      CanonTTLlaserCoaxialHigh signal-to-noise ratio;good process stability
      Off axis alignment(OAL)Halogen lampOff-axisLow workload of color difference correction design;mitigate interference cancellation
    • Table 2. Characteristic of alignment marks of ASML, Nikon, and Canon

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      Table 2. Characteristic of alignment marks of ASML, Nikon, and Canon

      CompanyAlignment markDimensionCharacteristic
      ASMLExtended primary mark(XPA)Two-dimensionalGrating with two periods;large area
      Scribe-lane primary mark(SPM)One-dimensional

      Split XPA into X and Y directions;

      small area

      Short SPM(SSPM)One-dimensionalSame width as SPM mark;about half length of SPM mark;lower wafer quality than SPM
      Narrow short SPM(NSSM)One-dimensionalSmaller width than SPM markers;same length as SSPM mark;lower wafer quality than SSPM
      SMASH marksTwo-dimensional180° symmetry;various forms;one scan to achieve alignment in two directions
      NikonLSA markOne-dimensionalIncluding search mark and enhanced global alignment(EGA)mark;single or multiple bars composed of grid shape
      FIA markTwo-dimensionalIncluding search mark and EGA mark;search mark are reticulated;EGA mark consisting of one-dimensional gratings in X and Y directions
      LIA markTwo-dimensionalSimilar with FIA marks
      CanonTTL markOne-dimensionalTilt to middle;45° from scanning direction
      OAL markTwo-dimensionalCross alignment mark with large area or long strip alignment mark with small area;one scan to achieve alignment in two directions
    • Table 3. Parameter characteristics of ASML alignment technologies

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      Table 3. Parameter characteristics of ASML alignment technologies

      TechnologyTTLATHENASMASHORION
      Process node /nm1309065-57-5
      Measuring wavelength /nm633532,633532,633,780,85012 wavelengths
      Capture range /μm±44±44±44±44
      Spot size /μm700700~36<36
      Diffraction order range(@period is 16 μm)±1±7±11±13
      NA0.050.30.60.7
      Interference generation methodReference gratingReference gratingSelf-reference interferenceSelf-reference interference
    • Table 4. Parameter characteristics of Nikon alignment technologies

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      Table 4. Parameter characteristics of Nikon alignment technologies

      TechnologyLSAFIALIA
      Light sourceHe-Ne laserHalogen lampHe-Ne laser
      Illumination modeDark field illuminationBright field illuminationBright field illumination
      TechnologyPhase grating intensity measurementImage processing techniquesHeterodyne interferometry
      Scope of applicationMost marksRough plane/Asymmetric marksShallow groove marks/ Metallic layer
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    Jun Qiu, Guanghua Yang, Jing Li, Zengxiong Lu, Minxia Ding. Development and Challenges of Lithographical Alignment Technologies[J]. Acta Optica Sinica, 2023, 43(19): 1900001

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    Paper Information

    Category: Reviews

    Received: Mar. 7, 2023

    Accepted: May. 6, 2023

    Published Online: Sep. 28, 2023

    The Author Email: Li Jing (lijing2018@ime.ac.cn)

    DOI:10.3788/AOS230637

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