[1] [1] Shinichi S. Single crystal diamond wafers for high power electronics［J］. Diamond and Related Materials, 2016, 65: 168-175.

[2] [2] Achard J, Issaoui R, Tallaire A, et al. Freestanding CVD boron doped diamond single crystals:a substrate for vertical power electronic devices［J］. Physica Status Solidi (a), 2012, 209(9): 1651-1658.

[3] [3] Manfred T. MPACVD-diamond windows for high-power and long-pulse millimeter wave transmission［J］. Diamond and Related Materials, 2001, 10(9-10): 1692-1699.

[4] [4] Tallaire A, Achard J, Silva F, et al. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition:recent achievements and remaining challenges［J］. Comptes Rendus Physique, 2013, 14(2/3):169-184.

[5] [5] Achard J, Silva F, Tallaire A, et al. High quality MPACVD diamond single crystal growth: high microwave power density regime［J］. Journal of Physics D: Applied Physics, 2007, 40(20): 6175-6188.

[6] [6] Achard J, Tallaire A, Sussmann R, et al. The control of growth parameters in the synthesis of high-quality single crystalline diamond by CVD［J］. Journal of Crystal Growth, 2005, 284(3/4): 396-405.

[7] [7] Silva F, Bonnin X, Scharpf J, et al. Microwave analysis of PACVD diamond deposition reactor based on electromagnetic modelling［J］. Diamond and Related Materials, 2010, 19(5/6): 397-403.

[8] [8] Füner M, Wild C, Koidl P. Simulation and development of optimized microwave plasma reactors for diamond deposition［J］. Surface and Coatings Technology, 1999, 116-119: 853-862.

[9] [9] Mallik A, Pal K, Dandapat N, et al. Influence of the microwave plasma CVD reactor parameters on substrate thermal management for growing large area diamond coatings inside a 915MHz and moderately low power unit［J］. Diamond and Related Materials, 2012, 30: 53-61.

[10] [10] Hagelaar G, Hassouni K, Gicquel A. Interaction between the electromagnetic fields and the plasma in a microwave plasma reactor［J］. Journal of Applied Physics, 2004, 96(4): 1819-1828.

[11] [11] Hassouni K, Silva F, Gicquel A. Modelling of diamond deposition microwave cavity generated plasmas［J］. Journal of Physics D: Applied Physics, 2010, 43: 153001

[12] [12] Yamada H, Chayahara A, Mokuno Y. Simplified description of microwave plasma discharge for chemical vapor deposition of diamond［J］. Journal of Applied Physics, 2007, 101(6).

[14] [14] Su J, Li Y, Liu Y, et al. Development of cylinderical cavity type microwave plasma CVD reactor for diamond films deposition［C］. IEEE International Conference on Plasma Science, 2013.

[15] [15] Yamada H, Chayahara A, Mokuno Y, et al. Numerical and experimental studies of high growth-rate over area with 1-inch in diameter under moderate input-power by using MWPCVD［J］. Diamond and Related Materials, 2008, 17(7/10): 1062-1066.

[16] [16] Yamada H, Chayahara A, Mokuno Y, et al. Microwave plasma generated in a narrow gap to achieve high power efficiency during diamond growth［J］. Diamond and Related Materials, 2009, 18(2/3): 117-120.

[17] [17] Füner M, Wild C, Koidl P. Novel microwave plasma reactor for diamond synthesis［J］. Applied Physics Letters, 1998, 72(10): 1149-1151.

[19] [19] Asmussen K, Grotjohn T, Schuelke D, et al. Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis［J］. Applied Physics Letter, 2008, 93(3): 1486.

[20] [20] Silva F, Hassouni K, Bonnin X, et al. Microwave engineering of plasma-assisted CVD reactors for diamond deposition［J］. J Phys Condens Matter, 2009, 21(36): 364202.

[21] [21] Shreya N, Yajun G, Asmussen J. Determining the microwave coupling and operational efficiencies of a microwave plasma assisted chemical vapor deposition reactor under high pressure diamond synthesis operating conditions[J]. Review of Entific Instruments, 2015, 86(7): 074701.

[22] [22] Yamada H, Chayahara A, Mokuno Y, et al. Qualitative correspondences of experimentally obtained growth rates and morphology of single-crystal diamond with numerical predictions of plasma and gas dynamics in microwave discharges for various substrate holder shapes［J］. Japanese Journal of Applied Physics, 2006, 45(10B): 8177-8182.

[23] [23] Nad S, Asmussen J. Analyses of single crystal diamond substrates grown in a pocket substrate holder via MPACVD［J］. Diamond and Related Materials, 2016, 66:36-46.

[25] [25] Chen S, Shen B, Zhang J, et al. Evaluation on residual stress of silicon-doped CVD Diamond films using X-ray diffraction and raman spectroscopy［J］. Transaction of nonferrous Metals Society of China, 2012, 22: 3221-3026.

[27] [27] Kirillov D, Reynolds G. Linewidths of phonon lines of natural and synthetic diamonds［J］. Applied Physics Letters, 1994, 65(13): 1641-3.

[28] [28] Philip M, Simon C, Andy J, et al. Identification of synthetic diamond grown using chemical vapor deposition (CVD)［J］. Gems and Gemology, 2004. 40(2): 2-25.

[30] [30] Bernhard D. Hand book of spectral lines in diamond volume1: tables and interpretations［M］. New York: Springer-Verlag Berlin Heidelberg, 2012: 93-123.

[31] [31] Kiflawi I, Mayer E, Spear M, et al. Infrared absorption by the single nitrogen and a defect centres in diamond［J］. Philosophical Magazine Part B, 1994, 69(6): 1141-1147.

[33] [33] Chrenko R, Strong M, Tuft E. Dispersed paramagnetic nitrogen content of large laboratory diamonds［J］. Philosophical Magazine, 1971, 23(182): 313-318.

[34] [34] Boyd R, Kiflawi I， Woods S. The relationship between infrared absorption and the a defect concentration in diamond［J］. Philosophical Magazine Part B, 1994, 69(6): 1149-1153.

[35] [35] Boyd R, Kiflawi I, Woods S. Infrared absorption by the B nitrogen aggregate in diamond［J］. Philosophical Magazine Part B, 1995, 72(3): 351-361.