[1] [1] K. Kishino, M. S. Unlü, J. Chyi et al.. Resonant cavity-enhanced (RCE) photodetectors［J］. IEEE J. Quantum Electron., 1991, 27(8): 2025～2034

[2] [2] M. S. Unlü, S. Strite, Resonant cavity enhanced photonic devices［J］. J.Appl.Phys., 1995, 78(2): 607～639

[3] [3] Knodl T, Choy K H. RCE photodetector based on VCSEL structure［J］. IEEE Photon. Technol. Lett., 1999, 11(10): 1289～1291

[4] [4] Liu Kai, Huang Yongqing, Ren Xiaomin. Theory and experiments of athree-cavity wavelength-selective photodetector［J］. Appl. Opt., 2000, 39(24): 423～620

[5] [5] Ren Xiaomin, Campbell J C. Anovel structure: one-mirror-inclinedthree-mirror-cavity high performance photodetectors［C］. Technical Proceedings of International Topic Meeting on Photoelectronics (ITMPE’97) Beijing: OSC, 1997: 81～84

[6] [6] Xiaomin Ren, Hui Huang, Yongqing Huang et al.. Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure［C］. SPIE, 2006, 6352: 635218

[7] [7] Huang Yongqing, Huang Cheng, Wang Qi et al.. Analysis of a one-mirror-inclined three-mirror-cavity photodetector for high-speed application［J］. Chin. Opt. Lett., 2005, 3(1): 53～56

[8] [8] W. Wang, X. Ren, H. Huang et al.. Tunable photodetector based on GaAs/InP wafer bonding［J］. IEEEElect. Dev. Letron., 2006, 27(10): 827～829

[9] [9] Qi Wang, JiheLv. Metamorphic In0.53 Ga0.47 As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD［J］. Chin. Opt. Lett., 2007, 5(6): 358～360

[10] [10] J. Lü, H Huang, X. Ren et al.. Monolithically integrated long-wavelength tunable photodetector［J］. IEEE J. Lightwave Technol., 2008, 26(3): 338～342

[11] [11] W. Wang, X. Ren, H. Huang et al.. Tunable photodetector based on GaAs/InP wafer bonding［J］. IEEE Eletron. Dev. Lett., 2006, 27(10): 827～829

[12] [12] Xiaofeng Duan, Yongqing Huang, Xiaomin Ren et al.. Reconfigurable multi-channel WDM drop module using a tunable wavelength-selective photodetector array［J］. Opt. Express, 2010, 18(6): 5879～5889