Acta Optica Sinica, Volume. 30, Issue s1, 100218(2010)
Monolithically Integrated Resonant Cavity-Enhanced Photodetector with Four-Mirror and Three-Cavity for Long Wavelength
A 1550 nm monolithically integrated resonant cavity-enhanced (RCE) semiconductor photodetector with four-mirror and three-cavity (M4C3) is reported. The contradiction among high quantum efficiency, high response speed and narrow spectral response linewidth is overcome by multi-cavities structure. High-quality GaAs/InP heteroepitaxy is realized by employing a low-temperature buffer layer. By adopting M4C3 structure, high quantum efficiency, high response speed, and narrow spectral response linewidth can be obtained simultaneously. Peak quantum efficiency of about 70%, spectral linewidth of 0.5 nm and 3 dB bandwidth of 8.0 GHz have been obtained in this device.
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Huang Yongqing, Duan Xiaofeng, Wang Wei, Yan Qiang, Di Jing, Ren Xiaomin, Huang Hui, Wang Qi, Zhang Xia. Monolithically Integrated Resonant Cavity-Enhanced Photodetector with Four-Mirror and Three-Cavity for Long Wavelength[J]. Acta Optica Sinica, 2010, 30(s1): 100218
Category: Fiber Optics and Optical Communications
Received: Jul. 29, 2010
Accepted: --
Published Online: Dec. 21, 2010
The Author Email: Yongqing Huang (yqhuang@bupt.edu.cn)