Acta Photonica Sinica, Volume. 49, Issue 8, 0831001(2020)
Structure and Luminescence Properties of Eu3+ and Dy3+ Co-implanted AlN Films
Dy3+ and Eu3+ ions with different doses were implanted into AlN thin films grown by hydride vapor phase epitaxy method. For Dy doped AlN, results of X-ray diffraction and Raman scattering show that the compressive stress of the sample increases with the increase of Dy3+ dose. When the Dy3+ dose increases from 5×1014 at/cm2 to 1×1015 at/cm2, the compressive stress of samples is close to saturation. For Dy3+ and Eu3+ co-doped AlN, according to the cathodoluminescence spectra, a possible energy transfer process between Dy3+ and Eu3+ is proposed. In addition, through changing the dose ratio of Dy3+ respect to Eu3+ ions, the chromaticity coordinates and color temperatures of Dy3+ and Eu3+ co-doped AlN can be effectively regulated.
Get Citation
Copy Citation Text
Hai MA, Xiao-dan WANG, Xiang LI, Dan WANG, Hong-min MAO, Xiong-hui ZENG. Structure and Luminescence Properties of Eu3+ and Dy3+ Co-implanted AlN Films[J]. Acta Photonica Sinica, 2020, 49(8): 0831001
Category: Thin Films
Received: Mar. 5, 2020
Accepted: Apr. 24, 2020
Published Online: Nov. 27, 2020
The Author Email: WANG Xiao-dan (xdwang0416@163.com)