Infrared and Laser Engineering, Volume. 52, Issue 3, 20220470(2023)
Rapid quantitative analysis of ZnGa2O4（GZO） thin films using picosecond laser induced breakdown spectroscopy
Figures & Tables(12)
Fig. 2. Optical band gap widths of GZO films at different sputtering powers
Fig. 7. Intensity variation of Ga lines I 403.29 nm at different positions
Fig. 8. Zn/Ga spectral line intensity ratio and atomic concentration ratio of GZO films at different sputtering powers
Fig. 9. Zn/Ga calibration curves of GZO films at different sputtering powers
Table 1. EDS data of GZO films at different sputtering powers
View tableView in ArticleTable 1. EDS data of GZO films at different sputtering powers
Sputtering parameters Atomic concentration ratios Power/W Zn Ga O Zn/Ga 70 2.53 9.78 87.69 0.259 80 2.32 9.58 88.09 0.242 90 2.73 11.64 85.63 0.235 95 2.93 13.32 83.74 0.220
Table 2. Spectral lines of target elements
View tableView in ArticleTable 2. Spectral lines of target elements
Element Number of lines Wavelength at the peak positions/nm Ga I 3 287.42, 294.36, 403.29 Zn I 3 328.23, 330.26, 334.50
Table 3. Spectral lines data of Ga using to calculate the plasma temperature
View tableView in ArticleTable 3. Spectral lines data of Ga using to calculate the plasma temperature
Elements Spectral lines/nm Atomic spectral lines data Aki/s−1 Ek/eV gk Ga I 287.42 1.17×108 4.3123 4 294.36 4.02×108 4.3131 2 403.29 4.85×107 3.0734 2
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Lili Dong, Qing Gao, Jiasen Wu, Xiangyu Xia, Shiming Liu, Junshan Xiu. Rapid quantitative analysis of ZnGa2O4（GZO） thin films using picosecond laser induced breakdown spectroscopy[J]. Infrared and Laser Engineering, 2023, 52(3): 20220470
Paper Information
Category: Materials & Thin films
Received: Nov. 10, 2022
Accepted: --
Published Online: Apr. 12, 2023
The Author Email: Xiu Junshan (xiujunshan@126.com)
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