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Optoelectronics Letters, Volume. 16, Issue 2, 87(2020)

Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells

Zhong-qiu XING1...2,3, Yong-jie ZHOU4, Xue CHEN1,2,3, Niass Mussaab I.1,2,3, Yi-fu WANG1,2,3, Fang WANG1,2,3, and Yu-huai LIU1,23,* |Show fewer author(s)
Author Affiliations
  • 1National Joint Research Center for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China
  • 2International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China
  • 3School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China
  • 4School of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, China
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    XING Zhong-qiu, ZHOU Yong-jie, CHEN Xue, Mussaab I. Niass, WANG Yi-fu, WANG Fang, LIU Yu-huai. Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells[J]. Optoelectronics Letters, 2020, 16(2): 87

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    Paper Information

    Received: Jun. 12, 2019

    Accepted: Aug. 6, 2019

    Published Online: Dec. 25, 2020

    The Author Email: Yu-huai LIU (ieyhliu@zzu.edu.cn)

    DOI:10.1007/s11801-020-9093-2

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology