Laser & Optoelectronics Progress, Volume. 56, Issue 3, 031601(2019)

Preparation and Characteristics of Middle and Far Infrared Stealth of Photonic Crystal Film under Intense Irradiation

Ruihuang Liu, Jiaming Shi*, Dapeng Zhao, Jikui Zhang, and Zhiwei Liu
Author Affiliations
  • State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology, Hefei, Anhui 230037, China
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    References(14)

    [1] Zhang J Q, Fang X P[M]. Infrared physics, 115-124(2007).

    [12] Fink Y, Winn J N, Fan S et al. A dielectric omnidirectional reflector[J]. Science, 282, 1679-1682(1998).

    [14] Ye Y T, Liu S[M]. Infrared and low light level technology, 48-58(2010).

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    Ruihuang Liu, Jiaming Shi, Dapeng Zhao, Jikui Zhang, Zhiwei Liu. Preparation and Characteristics of Middle and Far Infrared Stealth of Photonic Crystal Film under Intense Irradiation[J]. Laser & Optoelectronics Progress, 2019, 56(3): 031601

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    Paper Information

    Category: Materials

    Received: Aug. 2, 2018

    Accepted: Aug. 31, 2018

    Published Online: Jul. 31, 2019

    The Author Email: Shi Jiaming (sjmeei@yahoo.com.cn)

    DOI:10.3788/LOP56.031601

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