High Power Laser and Particle Beams, Volume. 36, Issue 10, 103005(2024)

Effect and mechanism of on-chip electrostatic discharge protection circuit under fast rising time electromagnetic pulse

Xinyi Mao... Changchun Chai, Fuxing Li*, Haodong Lin, Tianlong Zhao and Yintang Yang |Show fewer author(s)
Author Affiliations
  • Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an 710071, China
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    Figures & Tables(8)
    Structure of circuit and devices
    I-V characteristics of DTSCR
    Transient signals of voltage and current
    Variation of the peak temperature of the device with time
    Internal temperature distribution of the device under negative pulse
    Device of SCR1
    Change of peak temperature inside the device
    Damage amplitude threshold varying with pulse width
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    Xinyi Mao, Changchun Chai, Fuxing Li, Haodong Lin, Tianlong Zhao, Yintang Yang. Effect and mechanism of on-chip electrostatic discharge protection circuit under fast rising time electromagnetic pulse[J]. High Power Laser and Particle Beams, 2024, 36(10): 103005

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    Paper Information

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    Received: Jul. 16, 2024

    Accepted: Sep. 9, 2024

    Published Online: Nov. 13, 2024

    The Author Email: Li Fuxing (lifuxing2018@163.com)

    DOI:10.11884/HPLPB202436.240231

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