[1] [1] Marsh J H. Quantum well intermixing [J]. Semicond. Sci. Technol., 1993, 8(6): 1136-1155

[2] [2] Ladig W D, Holonyak N, Camras M D Jr et al. Disorder of an AlAs-GaAs super-lattice by impurity diffusion [J].Appl. Phys. Lett., 1981, 38(10): 776-778

[3] [3] Remiens D, Rose B, Carre M et al. GaInAsP/InP integrated ridge laser with a butt-joined transparent optical waveguide fabricated by single-step metalorganec vapor-phase epitaxy [J]. J. Appl. Phys.,1990, 68(5): 2450-2453

[4] [4] Holonyak N, Ladig W D, Camras M D Jr et al. IR-Red GaAs-AlAs super-lattice laser monolithically integrated in a yellow gap cavity [J]. Appl. Phys. Lett., 1981, 39(1): 102-104

[5] [5] Kaliski R W, Nam D W, Deppe D G et al. Thermal annealing and photo-luminescence measurements on AlxGa1-xAs-GaAs quantum-well heterostructures with Se and Mg sheet doping [J]. J. Appl. Phys., 1987, 62(3):998-1005

[6] [6] Kaliski R W, Gavrilovic P, Meehan K et al. Photoluminscence and stimulated emission in Si-and Ge-disordered AlxGa1-xAs-GaAs super-lattices [J]. J. Appl. Phys., 1985, 58(1): 101-107

[7] [7] Kaliski R W , Gavrilovic P, Meehan K et al. Photoluminscence and stimulated emission in Si-and Ge-disordered AlxGa1-xAs-GaAs superlattices [J]. J. Appl. Phys., 1985, 58(1): 101-107

[8] [8] Temkin H, Chu S N G, Panish M B et al. Thermal stability of In GaAs/InP quantum well structures grown by gas source molecular beam epitaxy [J]. Appl. Phys. Lett., 1987, 50(15): 956-958