Chinese Optics Letters, Volume. 15, Issue 7, 071301(2017)
Influence of dynamic power dissipation on Si MRM modulation characteristics
Figures & Tables(7)
![(a) Structure of Si MRM, (b) cross section of Si MRM, and (c) measured electro-optic S21 at five different detuning values[8].](/Images/icon/loading.gif){kind=icon}
Fig. 1. (a) Structure of Si MRM, (b) cross section of Si MRM, and (c) measured electro-optic
Fig. 3. (a) Narrowband transmission spectrum of Si MRM and (b) eye diagrams for various data rates at 1553.395-nm input wavelength.
Fig. 4. Transmission spectra measured under data modulation with different data patterns: (a) PRBS 231-1 and (b) “1010” data. (c) Resonance wavelength shift dependence on data rates for two different data patterns.
Fig. 5. (a) Transmission spectra measured under data modulation with different modulation voltages and (b) resonance wavelength shift dependence on modulation voltages.
Fig. 6. (a) Transmission spectra with data modulation at 5 and 25 Gb/s and (b) eye diagrams at different conditions.
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Byung-Min Yu, Myungjin Shin, Min-Hyeong Kim, Lars Zimmermann, Woo-Young Choi. Influence of dynamic power dissipation on Si MRM modulation characteristics[J]. Chinese Optics Letters, 2017, 15(7): 071301
Paper Information
Category: Integrated Optics
Received: Jan. 10, 2017
Accepted: Mar. 24, 2017
Published Online: Jul. 20, 2018
The Author Email: Woo-Young Choi (wchoi@yonsei.ac.kr)
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