Chinese Optics Letters, Volume. 15, Issue 7, 071301(2017)

Influence of dynamic power dissipation on Si MRM modulation characteristics

Byung-Min Yu1, Myungjin Shin1, Min-Hyeong Kim1, Lars Zimmermann2, and Woo-Young Choi1、*
Author Affiliations
  • 1Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea
  • 2Innovations for High Performance Microelectronics (IHP), Frankfurt (Oder) 15236, Germany
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    Figures & Tables(7)
    (a) Structure of Si MRM, (b) cross section of Si MRM, and (c) measured electro-optic S21 at five different detuning values[8].
    Measurement setup.
    (a) Narrowband transmission spectrum of Si MRM and (b) eye diagrams for various data rates at 1553.395-nm input wavelength.
    Transmission spectra measured under data modulation with different data patterns: (a) PRBS 231-1 and (b) “1010” data. (c) Resonance wavelength shift dependence on data rates for two different data patterns.
    (a) Transmission spectra measured under data modulation with different modulation voltages and (b) resonance wavelength shift dependence on modulation voltages.
    (a) Transmission spectra with data modulation at 5 and 25 Gb/s and (b) eye diagrams at different conditions.
    Electrical model of Si MRM.
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    Byung-Min Yu, Myungjin Shin, Min-Hyeong Kim, Lars Zimmermann, Woo-Young Choi. Influence of dynamic power dissipation on Si MRM modulation characteristics[J]. Chinese Optics Letters, 2017, 15(7): 071301

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    Paper Information

    Category: Integrated Optics

    Received: Jan. 10, 2017

    Accepted: Mar. 24, 2017

    Published Online: Jul. 20, 2018

    The Author Email: Woo-Young Choi (wchoi@yonsei.ac.kr)

    DOI:10.3788/COL201715.071301

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