Acta Physica Sinica, Volume. 68, Issue 11, 117301-1(2019)
Fig. 1. Morphological change of patterned GaAs (001) substrate before and after deoxidation: (a) AFM image of flat GaAs after deoxidation; AFM image of patterned GaAs before (b) and after deoxidation (c), the trenches are orientated along
direction and the sidewall inclination angle
Fig. 2. Morphological change of the trenches (inclination angle α1 ≈ 40° and orientated along
direction) after GaAs buffer growth: (a), (b) AFM images of the trenches before and after the deposition of 30 nm GaAs buffer at low temperature; (c) the black and red lines represent the cross-sectional AFM line-scans of (a) and (b).
Fig. 3. Site-controlled growth of InAs QDs on patterned GaAs with trenches along direction. 沿 方向的纳米沟槽中InAs量子点优先成核位置分布图
Fig. 4. Dependence of preferential nucleation site of InAs QDs on trench inclination angle of the patterned GaAs.InAs量子点在GaAs纳米沟槽中优先成核位置与纳米沟槽侧壁倾斜角
Fig. 5. Orientational dependence of InAs QDs on trench-patterned GaAs along
and [110]: (a) and (b) AFM images of InAs QDs grown on trench-patterned GaAs along
and [110] with a trench inclination angle
Fig. 6. Site-controlled growth of InAs QDs molecules on pit-patterned GaAs (001) substrate: (a) Double InAs QDs molecules at the pits bottom; (b) four InAs QDs molecules in the pits; (c) QDs rings around the pits; (d) cross-sectional AFM line-scan of these pits. The inclination angles are 10°, 17°, 28°, respectively.调控纳米孔洞侧壁的倾斜角
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Hai-Ling Wang, Ting Wang, Jian-Jun Zhang.
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Received: Mar. 6, 2019
Accepted: --
Published Online: Oct. 30, 2019
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