Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Haiyan Lü; Yuanjie Lü; Qiang Wang; Jianfei Li; Zhihong Feng; Xiangang Xu; Ziwu Ji

doi:10.3788/COL201614.042302

Chinese Optics Letters, Volume. 14, Issue 4, 042302(2016)

Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Haiyan Lü¹, Yuanjie Lü², Qiang Wang¹, Jianfei Li¹, Zhihong Feng², Xiangang Xu³, and Ziwu Ji^1、*

Author Affiliations

¹School of Physics, Shandong University, Jinan 250100, China

²National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

³Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China

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Haiyan Lü, Yuanjie Lü, Qiang Wang, Jianfei Li, Zhihong Feng, Xiangang Xu, Ziwu Ji. Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells[J]. Chinese Optics Letters, 2016, 14(4): 042302

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Paper Information

Category: Optical devices

Received: Aug. 25, 2015

Accepted: Feb. 4, 2016

Published Online: Aug. 6, 2018

The Author Email: Ziwu Ji (jiziwu@sdu.edu.cn)

DOI:10.3788/COL201614.042302

Topics

laser devices and laser physics

Lasers and Laser Optics

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laser manufacturing

Instrumentation, Measurement and Metrology