Acta Physica Sinica, Volume. 69, Issue 16, 162901-1(2020)
Figures & Tables(12)
Fig. 2. Comparison between the differential neutron energy spectra of CSNS back-n and Yangbajing.
Fig. 4. Comparison between the SEE cross sections of devices with different test patterns.
Fig. 5. Comparison of the SEE cross sections of the devices with the same feature sizes from different manufacturer: (a) 350 nm SRAM; (b) 130 nm SRAM; (c) 65 nm SRAM.
Fig. 6. Comparison of the SEE cross sections of devices from the same manufacturer with different feature sizes: (a) HITECHI/RENESAS HM SRAM; (b) Cypress CY1318SRAM; (c) Cypress CY62126SRAM; (d) ISSI IS6X SRAM
Fig. 7. MCU rates of the devices with different test patterns: (a) IS61WV204816(40 nm); (b) CY62126DV(130 nm); (c) HM62V8100 (180 nm); (d) IS64WV25616 (65 nm)
Fig. 8. MCU rates and sizes of the devices with the same feature sizes from different manufacturer.
Fig. 9. MCU rates and sizes of the devices from the same manufacturer with different feature sizes: (a) CY7C1318; (b) IS6X
Table 1.
Parameters of the SRAM devices for test.
待测SRAM器件参数
View tableView in ArticleTable 1.
Parameters of the SRAM devices for test.
待测SRAM器件参数
型号 制造商 容量/bits 特征尺寸/nm 工作电压/V HM628512A HITACHI 4 M (512 K × 8) 500 5 HM628512B HITACHI 4 M (512 K × 8) 350 3.3 HM62V8100 RENESAS 8 M (1 M × 8) 180 3.3 IS62WV1288 ISSI 1 M (128 K × 8) 130 3.3 IS64WV25616 ISSI 4 M (256 K × 16) 65 3.3 IS61WV204816 ISSI 32 M (2 M × 16) 40 3.3 CY62126V Cypress 1 M (64 K × 16) 350 3.0 CY62126BV Cypress 1 M (64 K × 16) 250 3.0 CY62126DV Cypress 1 M (64 K × 16) 130 3.0 CY7C1318AV18 Cypress 18 M (1 M × 18) 150 1.8 CY7C1318BV18 Cypress 18 M (1 M × 18) 90 1.8 CY7C1318KV18 Cypress 18 M (1 M × 18) 65 1.8 M328C 国产 256 K (32 K × 8) 65 1.8
Table 2.
Test results of the SEUs at CSNS back-n.
在CSNS反角白光中子源的SEU测试结果
View tableView in ArticleTable 2.
Test results of the SEUs at CSNS back-n.
在CSNS反角白光中子源的SEU测试结果
型号 特征尺寸/nm 测试图形 容量/Mbit 注量(>10 MeV)/108n·cm–2 翻转数/# 翻转截面/10-14cm2·bit–1 不确定度/% HM628512A 500 0x00H 12 5.54 176 2.52 12.88 0x55H 12 7.21 262 2.89 12.13 0xAAH 12 5.38 215 3.18 12.47 0xFFH 12 5.36 205 3.04 12.56 HM628512B 350 0x00H 12 5.71 207 2.88 12.54 0x55H 8 7.03 197 3.34 12.64 0xAAH 12 8.97 303 2.69 11.92 0xFFH 12 3.26 114 2.78 14.03 HM62V8100 180 0x00H 24 5.31 343 2.57 11.75 0x55H 24 5.29 367 2.76 11.67 0xAAH 24 5.29 387 2.91 11.61 0xFFH 24 5.36 342 2.53 11.76 IS62WV1288 130 0x00H 1 9.52 55 5.51 17.05 0xAAH 3 8.05 116 4.58 13.97 0xFFH 3 10.20 151 4.68 13.24 IS64WV25616 65 0x00H 8 4.76 271 6.79 12.08 0x55H 8 4.76 339 8.49 11.77 0xAAH 8 5.23 381 8.68 11.63 0xFFH 8 4.50 275 7.28 12.06 IS61WV204816 40 0x00H 64 4.76 534 1.67 11.30 0x55H 64 4.76 523 1.64 11.32 0xAAH 64 4.76 589 1.84 11.22 0xFFH 64 6.35 707 1.66 11.10 CY62126V 350 0x55H 3 9.88 64 2.06 16.29 0xAAH 3 9.88 71 2.28 15.81 CY62126BV 250 0x55H 3 128.00 516 1.28 11.33 CY62126DV 130 0x00H 3 10.40 115 3.53 14.00 0x55H 3 10.60 139 4.16 13.45 0xAAH 3 10.40 141 4.30 13.41 0xFFH 3 9.04 106 3.73 14.26 CY7C1318AV18 150 0X55H 32 5.12 1293 7.52 10.80 CY7C1318BV18 90 0X55H 32 4.69 381 2.42 11.63 CY7C1318KV18 65 0X55H 32 5.09 374 2.19 11.65 M328C 65 0X55H 0.75 116 167 1.84 13.00
Table 3.
Extraction results of the single event multiple cell upsets.
单粒子MCU提取结果
View tableView in ArticleTable 3.
Extraction results of the single event multiple cell upsets.
单粒子MCU提取结果
型号 特征尺寸/nm 不同测试图形时MCU占比 最大MCU位数 0x00 0x55H 0xAAH 0xFFH HM628512A 500 0 0 0 0 1 HM628512B 350 0 0 0 0 1 HM62V8100 180 2.33% 5.94% 1.09% 4.68% 2 IS62WV1288 130 — 0 4.65% 0 2 IS64WV25616 65 9.59% 9.14% 6.01% 0.73% 3 IS61WV204816 40 28.29% 24.09% 28.52% 25.00% 7 CY62126V 350 0 0 0 0 1 CY62126BV 250 0 0 0 0 1 CY62126DV 130 40.00% 35.97% 35.46% 45.28% 3 CY7C1318AV18 150 — 36.13% — — 4 CY7C1318BV18 90 — 42.31% — — 6 CY7C1318KV18 65 — 56.80% — — 7 M328C 65 — 14.37% — — 2
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Xun Wang, Feng-Qi Zhang, Wei Chen, Xiao-Qiang Guo, Li-Li Ding, Yin-Hong Luo.
Paper Information
Category: Research Articles
Received: Feb. 23, 2020
Accepted: --
Published Online: Jan. 4, 2021
The Author Email:
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