Acta Photonica Sinica, Volume. 31, Issue 4, 458(2002)
THE X-RAY DIFFRACTION ROCKING CURVE OF AlGaAs/GaAs EPITAXIAL LAYER OF TRANSPARENT GaAs PHOTOCATHODE
References(5)
[1] [1] Fewster P F.X-ray diffraction from low dimensional structures.Semicond Sci Technol,1993,8(10):1915～1916
[2] [2] Fewster P F.Composition and lattice mismatch measurements of thin semiconductor layers by X-ray diffraction.J Appl Phys,1987,62(10):4154～4158
[3] [3] Bartels W J,Nijman W J.X-ray double crystal diffractometry of Ga1-xAlx As epitaxial layers.J Crystal Growth,1978,44(25):522～523
[4] [4] van der Sluis P.Determination of strain in epitaxial semiconductor structures by high-resolution X-ray diffraction.1994,A58:129～134
[5] [5] Bartels W J,Nijman W J.X-ray double crystal diffractometry of Ga1-xAlxAs epitaxial layers.J Crystal Growth,1978,44(25):518～525
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE X-RAY DIFFRACTION ROCKING CURVE OF AlGaAs/GaAs EPITAXIAL LAYER OF TRANSPARENT GaAs PHOTOCATHODE[J]. Acta Photonica Sinica, 2002, 31(4): 458
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