Opto-Electronic Engineering, Volume. 43, Issue 2, 50(2016)

Temperature Dependence of the Electrical Characteristics of ZnO Thin Film Transistors

WANG Cong1...2 and LIU Yurong34 |Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    References(15)

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    [6] [6] LIU Yurong,LIAO Rong,LI Peitao,et al. Bias-stress-induced instability of polymer thin-film transistor based on poly(3-hexylthiophene) [J]. IEEE Transactions on Device and Materials Reliability(S1530-4388),2012,12(1):58-62.

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    [9] [9] LIU Yurong,SU Jing,LI Peitao,et al. Positive gate-bias temperature instability of ZnO thin-film transistor [J]. Chinese Physics B(S1674-1056),2014,23(6):068501-1-6.

    [10] [10] FAN Chinglin,SHANG Mingchi,LI Bojyun,et al. Teflon/SiO2 bilayer passivation for improving the electrical reliability of oxide TFTs fabricated using a new two-photomask self-alignment process [J]. Materials(S1996-1944),2015,8(4):1704-1713.

    [11] [11] Estrada M,Gutierrez-Heredia G,Cerdeira A,et al. Temperature dependence of the electrical characteristics of low-temperature processed zinc oxide thin film transistors [J]. Thin Solid Films(S0040-6090),2014,573:18-21.

    [12] [12] WANG Cong,LIU Yurong,LI Xinghuo,et al. Photo-induced instability of ZnO-based thin-film transistors [J]. Journal of South China University of Technology:Natural Science Edition,2013,41(6):11-16.

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    WANG Cong, LIU Yurong. Temperature Dependence of the Electrical Characteristics of ZnO Thin Film Transistors[J]. Opto-Electronic Engineering, 2016, 43(2): 50

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    Paper Information

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    Received: Nov. 17, 2015

    Accepted: --

    Published Online: Mar. 23, 2016

    The Author Email:

    DOI:10.3969/j.issn.1003-501x.2016.02.009

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