Fig. 1. Band structure of Hg_1-xCd_xTe changes with composition and image of response curve of HgCdTe material (red curve)

Fig. 2. Variation of carrier temperature, lattice temperature and number density of carrier with time at the incident plane (100 ps, 200 mJ/cm² incident pulse)

Fig. 3. Material’s temperature and carrier density in the HgCdTe material change with pulse width (energy density is 200 mJ/cm²)

Fig. 4. Material’s temperature and carrier density in HgCdTe material irradiated by different kinds of laser pulses change with energy density (pulse width is 30 ps ～ 10 ns. Energy density is 100～500 mJ/cm²)

Fig. 5. Hierarchical structure diagram of HgCdTe detector and transmittance curve of optical filter

Fig. 6. Schematic diagram of experimental device

Fig. 7. Contour plot of detector pixels’ response measured by attenuation method and image of light spot displayed by the detector (The light intensity attenuates to 2.85×10^-7 of the original intensity)

Fig. 8. Damage images of the detector pixel induced by 300 ps (energy density is 193 mJ/cm²) and 10 ns (energy density is 474 mJ/cm²) single pulsed laser