Chinese Journal of Quantum Electronics, Volume. 27, Issue 2, 242(2010)

Self-trapping energy of bound magnetopolaron in a polar slab of semiconductor

Xiu-qing WANG*
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  • [in Chinese]
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    References(8)

    [1] [1] Licari J J, Evrand R. Electron-phonons interaction in adielectric slab: effects of the electronic polarizability [J]. Phys. Rev. B, 1977, 15: 2254-2264.

    [2] [2] Licari J J. Polaron self-energy in a dielectric slab [J]. Solid State Commun., 1979, 29: 625.

    [3] [3] Sherman A V. Dependence of the polaron binding energy and effective mass in a crystal layer on its thickness [J]. Solid State Commun., 1981, 39: 273.

    [4] [4] Hawton M H, Paranjape V V. Polaron in thin slab [J]. J. Phys. Soc. Jpn., 1983, 49: 3563-3570.

    [5] [5] Sarma S Das. The effective mass in GaAs heterostructure [J]. Phys. Rev. B, 1983, 27: 2590.

    [6] [6] Gu Shiwei, Kong Xiaojun, Wei Chengwen. A magnetopolaron in aslabofa polar crystal [J]. J. Phys. C: Solid State Phys., 1998, 21: 1497-1510.

    [7] [7] Ninno D, Ladonisi G. Calculation of surface-polaron ground-state energy and effective potential [J]. Phys. Rev. B, 1988, 38: 3803.

    [12] [12] Kartheuse E. Polaron in Ionic Crystals and Polar Semiconductors [M]. New York: North-Holland, 1972.

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    WANG Xiu-qing. Self-trapping energy of bound magnetopolaron in a polar slab of semiconductor[J]. Chinese Journal of Quantum Electronics, 2010, 27(2): 242

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    Paper Information

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    Received: Aug. 4, 2009

    Accepted: --

    Published Online: May. 31, 2010

    The Author Email: Xiu-qing WANG (wxq[EQUATION]1975@163.com)

    DOI:

    CSTR:32186.14.

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