Chinese Journal of Quantum Electronics, Volume. 27, Issue 2, 242(2010)
Self-trapping energy of bound magnetopolaron in a polar slab of semiconductor
[1] [1] Licari J J, Evrand R. Electron-phonons interaction in adielectric slab: effects of the electronic polarizability [J]. Phys. Rev. B, 1977, 15: 2254-2264.
[2] [2] Licari J J. Polaron self-energy in a dielectric slab [J]. Solid State Commun., 1979, 29: 625.
[3] [3] Sherman A V. Dependence of the polaron binding energy and effective mass in a crystal layer on its thickness [J]. Solid State Commun., 1981, 39: 273.
[4] [4] Hawton M H, Paranjape V V. Polaron in thin slab [J]. J. Phys. Soc. Jpn., 1983, 49: 3563-3570.
[5] [5] Sarma S Das. The effective mass in GaAs heterostructure [J]. Phys. Rev. B, 1983, 27: 2590.
[6] [6] Gu Shiwei, Kong Xiaojun, Wei Chengwen. A magnetopolaron in aslabofa polar crystal [J]. J. Phys. C: Solid State Phys., 1998, 21: 1497-1510.
[7] [7] Ninno D, Ladonisi G. Calculation of surface-polaron ground-state energy and effective potential [J]. Phys. Rev. B, 1988, 38: 3803.
[12] [12] Kartheuse E. Polaron in Ionic Crystals and Polar Semiconductors [M]. New York: North-Holland, 1972.
Get Citation
Copy Citation Text
WANG Xiu-qing. Self-trapping energy of bound magnetopolaron in a polar slab of semiconductor[J]. Chinese Journal of Quantum Electronics, 2010, 27(2): 242
Category:
Received: Aug. 4, 2009
Accepted: --
Published Online: May. 31, 2010
The Author Email: Xiu-qing WANG (wxq[EQUATION]1975@163.com)
CSTR:32186.14.