Chinese Journal of Quantum Electronics, Volume. 27, Issue 2, 242(2010)
Self-trapping energy of bound magnetopolaron in a polar slab of semiconductor
The relationship between the ground state energy and self-trapping energy (E^{tr}_{e-ph}) with the polar slab thickness of the bound magnetopolaron in a polar slab was studied by using the Huybrecht’s linear combination operator and unitary transformations method. [EQUATION] consists of two parts, one is [EQUATION], the other is [EQUATION], and [EQUATION] also consists of two parts, one is [EQUATION], the other is [EQUATION]. Taking KCl as an example, [EQUATION] and [EQUATION] all reduced with the increase of the slab thickness, and the self-trapping energy was stablized to a low level when the slab thickness was above 5 nm, while when there was a stable magnetic fild, it increased. The reason is probably the change of electron-phonon interaction in presence of stable magnetic field.
Get Citation
Copy Citation Text
WANG Xiu-qing. Self-trapping energy of bound magnetopolaron in a polar slab of semiconductor[J]. Chinese Journal of Quantum Electronics, 2010, 27(2): 242
Category:
Received: Aug. 4, 2009
Accepted: --
Published Online: May. 31, 2010
The Author Email: Xiu-qing WANG (wxq[EQUATION]1975@163.com)
CSTR:32186.14.