Chinese Physics B, Volume. 29, Issue 8, (2020)

Growth and physical characterization of high resistivity Fe: β-Ga2O3 crystals

Hao Zhang1, Hui-Li Tang1、†, Nuo-Tian He1, Zhi-Chao Zhu2, Jia-Wen Chen1, Bo Liu1, and Jun Xu1,3
Author Affiliations
  • 1MOE Key Laboratory of Advanced Micro-Structured Materials, School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China
  • 2School of Chemical Science and Engineering, Tongji University, Shanghai 0009, China
  • 3Shanghai Engineering Research Center for Sapphire Crystals, Shanghai 201899, China
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    Figures & Tables(9)
    The 0.02 mol% Fe: β-Ga2O3 single crystal.
    The XRD patterns of β-Ga2O3 and Fe: β-Ga2O3 crystals.
    XRD rocking curve of 0.02 mol% Fe: β-Ga2O3 wafer.
    Room-temperature optical transmission spectra (a) and absorption edges (b) of 0.02 mol%, 0.05 mol%, and 0.08 mol% Fe-doped β-Ga2O3 crystals.
    The I–V curves of 0.02 mol%, 0.05 mol%, and 0.08 mol% Fe: β-Ga2O3 crystals.
    Temperature-dependent resistivity of 0.08 mol% Fe: β-Ga2O3 crystal from 100 °C to 550 °C.
    Temperature-dependent specific heat of 0.02 mol% Fe: β-Ga2O3 crystal.
    Temperature-dependent thermal diffusivity of 0.02 mol% Fe: β-Ga2O3 crystal along the [100] direction.
    • Table 1. Influences of the Fe dopant on the optical bandgap and resistivity.

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      Table 1. Influences of the Fe dopant on the optical bandgap and resistivity.

      Doping concentration/mol%Pure0.020.050.08
      Optical bandgap/eV4.6954.3384.0443.760
      Resistivity/Ω⋅cm2.40 × 10−11.89 × 1088.47 × 10103.63 × 1011
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    Hao Zhang, Hui-Li Tang, Nuo-Tian He, Zhi-Chao Zhu, Jia-Wen Chen, Bo Liu, Jun Xu. Growth and physical characterization of high resistivity Fe: β-Ga2O3 crystals[J]. Chinese Physics B, 2020, 29(8):

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    Paper Information

    Received: Apr. 20, 2020

    Accepted: --

    Published Online: Apr. 29, 2021

    The Author Email: Tang Hui-Li (tanghl@tongji.edu.cn)

    DOI:10.1088/1674-1056/ab942d

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