Chinese Physics B, Volume. 29, Issue 8, (2020)
Growth and physical characterization of high resistivity Fe: β-Ga2O3 crystals
High quality 0.02 mol%, 0.05 mol%, and 0.08 mol% Fe: β-Ga2O3 single crystals were grown by the floating zone method. The crystal structure, optical, electrical, and thermal properties were measured and discussed. Fe: β-Ga2O3 single crystals showed transmittance of higher than 80% in the near infrared region. With the increase of the Fe doping concentration, the optical bandgaps reduced and room temperature resistivity increased. The resistivity of 0.08 mol% Fe: β-Ga2O3 crystal reached to 3.63 × 1011 Ω ?cm. The high resistivity Fe: β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors (FETs).
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Hao Zhang, Hui-Li Tang, Nuo-Tian He, Zhi-Chao Zhu, Jia-Wen Chen, Bo Liu, Jun Xu. Growth and physical characterization of high resistivity Fe: β-Ga2O3 crystals[J]. Chinese Physics B, 2020, 29(8):
Received: Apr. 20, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Tang Hui-Li (tanghl@tongji.edu.cn)