Hybrid C8-BTBT/InGaAs nanowire heterojunction for artificial photosynaptic transistors

Yiling Nie; Pengshan Xie; Xu Chen; Chenxing Jin; Wanrong Liu; Xiaofang Shi; Yunchao Xu; Yongyi Peng; Johnny C. Ho; Jia Sun; Junliang Yang

doi:10.1088/1674-4926/43/11/112201

Journal of Semiconductors, Volume. 43, Issue 11, 112201(2022)

Hybrid C8-BTBT/InGaAs nanowire heterojunction for artificial photosynaptic transistors

Yiling Nie¹, Pengshan Xie², Xu Chen¹, Chenxing Jin¹, Wanrong Liu¹, Xiaofang Shi¹, Yunchao Xu¹, Yongyi Peng¹, Johnny C. Ho^2,3,4、*, Jia Sun^1、**, and Junliang Yang^1、***

Author Affiliations

¹Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China

²Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China

³State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China

⁴Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou 450002, China

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Yiling Nie, Pengshan Xie, Xu Chen, Chenxing Jin, Wanrong Liu, Xiaofang Shi, Yunchao Xu, Yongyi Peng, Johnny C. Ho, Jia Sun, Junliang Yang. Hybrid C8-BTBT/InGaAs nanowire heterojunction for artificial photosynaptic transistors[J]. Journal of Semiconductors, 2022, 43(11): 112201

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Paper Information

Category: Articles

Received: May. 19, 2022

Accepted: --

Published Online: Nov. 18, 2022

The Author Email: Ho Johnny C. (johnnyho@cityu.edu.hk), Sun Jia (jiasun@csu.edu.cn), Yang Junliang (junliang.yang@csu.edu.cn)

DOI:10.1088/1674-4926/43/11/112201

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