III-nitride MQW-based optoelectronic sensors for multifunctional environmental monitoring

Xumin Gao; Dongmei Wu; Tianlong Xie; Jialei Yuan; Mingyuan Xie; Yongjin Wang; Haitao Zhao; Gangyi Zhu; Zheng Shi

doi:10.1016/j.chip.2024.100113

Chip, Volume. 3, Issue 4, 100113(2024)

III-nitride MQW-based optoelectronic sensors for multifunctional environmental monitoring

Xumin Gao¹, Dongmei Wu¹, Tianlong Xie¹, Jialei Yuan¹, Mingyuan Xie¹, Yongjin Wang¹, Haitao Zhao², Gangyi Zhu¹, and Zheng Shi^1、*

Author Affiliations

¹GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications, Nanjing 210003,

²School of Internet of Things, Nanjing University of Posts and Telecommunications, Nanjing 210003,

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References(33)

[1] [1] J.-K. Song, M.S. Kim, S. Yoo, J.H. Koo, D.-H. Kim. Materials and devices for flexible and stretchable photodetectors and light-emitting diodes. 10.1007/s12274-021-3447-3

[2] [2] H. Wang, Q. Tang, X. Zhao, Y. Tong, Y. Liu. Ultrasensitive flexible proximity sensor based on organic crystal for location detection. 10.1021/acsami.7b15352

[3] [3] L. Chen, Y.P. Wu, K.H. Li. Monolithic InGaN/GaN photonic chips for heart pulse monitoring. 10.1364/ol.400733

[4] [4] L. Qi, X. Zhang, W.C. Chong, K.M. Lau. Monolithically integrated high-resolution full-color GaN-on-Si micro-LED microdisplay. 10.1364/prj.465489

[5] [5] M. Prosa, et al.. Organic light-emitting transistors in a smart-integrated system for plasmonic-based sensing. 10.1002/adfm.202104927

[6] [6] F. Chiavaioli, C.A.J. Gouveia, P.A.S. Jorge, F. Baldini. Towards a uniform metrological assessment of grating-based optical fiber sensors: from refractometers to biosensors. 10.3390/bios7020023

[7] [7] I.S. Amiri, G. Palai, J.A. Alzubi, S.R. Nayak. Chip to chip communication through the photonic integrated circuit: a new paradigm to optical VLSI. 10.1016/j.ijleo.2019.163588

[8] [8] R. X.G. Ferreira, et al.. High bandwidth GaN-based micro-LEDs for multi-Gb/s visible light communications. 10.1109/lpt.2016.2581318

[9] [9] Z.J. Liu, T. Huang, J. Ma, C. Liu, K.M. Lau. Monolithic integration of AlGaN/GaN HEMT on LED by MOCVD. 10.1109/led.2014.2300897

[10] [10] K.H. Li, W.Y. Fu, H. Choi. Chip-scale GaN integration. 10.1016/j.pquantelec.2020.100247

[11] [11] J.-H. Ryou, et al.. Control of quantum-confined Stark effect in InGaN-based quantum wells. 10.1109/jstqe.2009.2014170

[12] [12] S. Nakamura, T. Mukai, M. Senoh. High-power GaN pn junction blue-light-emitting diodes. 10.1143/jjap.30.l1998

[13] [13] K.H. Li, Y.F. Cheung, W.Y. Fu, K. K.-Y. Wong, H.W. Choi. Monolithic integration of GaN-on-sapphire light-emitting diodes, photodetectors, and waveguides. 10.1109/jstqe.2018.2827665

[14] [14] K.H. Li, et al.. Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on si substrate. 10.1364/OPTICA.5.000564

[15] [15] X. He, et al.. 1 Gbps free-space deep-ultraviolet communications based on III-nitride micro-LEDs emitting at 262 nm. 10.1364/prj.7.000b41

[16] [16] K. Singh, et al.. Investigations on mode-division multiplexed free-space optical transmission for inter-satellite communication link. 10.1007/s11276-022-02894-1

[17] [17] S. Nakamura, M. Senoh, N. Iwasa, S.-i. Nagahama. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures. 10.1143/jjap.34.l797

[18] [18] A. Laubsch, M. Sabathil, J. Baur, M. Peter, B. Hahn. High-power and high-efficiency InGaN-based light emitters. 10.1109/ted.2009.2035538

[19] [19] J.J. Wierer, et al.. InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures. 10.1063/1.1738934

[20] [20] Y.D. Jhou, et al.. Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures. 10.1016/j.sse.2005.06.002

[21] [21] K. Fu, et al.. Full-duplex visible light communication system using a single channel. 10.1364/ol.470796

[22] [22] H. Nakazato, H. Kawaguchi, A. Iwabuchi, K. Hane. Micro fluorescent analysis system integrating GaN-light-emitting-diode on a silicon platform. 10.1039/c2lc40178a

[23] [23] Z. Shi, J. Yuan, S. Zhang, Y. Liu, Y. Wang. Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics. 10.1016/j.optmat.2017.05.039

[24] [24] X. An, Y. Luo, B. Yu, L. Chen, K.H. Li. A chip-scale GaN-based optical pressure sensor with microdome-patterned polydimethylsiloxane (PDMS). 10.1109/led.2021.3103891

[25] [25] Z. Liu, et al.. Fully integrated patch based on lamellar porous film assisted GaN optopairs for wireless intelligent respiratory monitoring. 10.1021/acs.nanolett.3c02071

[26] [26] X. Li, et al.. Integrated sensing and communication chip based on III-nitride for motion detection. 10.1021/acsomega.3c00521

[28] [28] Y. Luo, B. Yu, L. Chen, K.H. Li. Micro humidity sensor based on a GaN chip with silica opal. 10.1109/led.2021.3070392

[29] [29] Y. Luo, G. Lu, Q. Wang, Z. Chu, K.H. Li. Miniature viscometer incorporating GaN optical devices with an ultrawide measurement range. 10.37188/lam.2023.002

[30] [30] X. Gao, et al.. Monolithic integrated MQW-based optoelectronic glucose sensor. 10.1364/ol.505034

[31] [31] J. Yan, et al.. Compact fluorescence detection system based on a monolithic DBR-integrated III-nitride LED chip. 10.1021/acsomega.2c06839

[32] [32] L. Pan, et al.. Miniaturized GaN-based optical hydrophones for underwater low-frequency acoustic detection. 10.1109/lpt.2024.3454151

[33] [33] X. An, H. Yang, Y. Luo, Z. Chu, K.H. Li. Ultrafast miniaturized gan-based optoelectronic proximity sensor. 10.1364/prj.462933

[34] [34] J. Yuan, et al.. Optical proximity sensors using multiple quantum well didoes. 10.1364/oe.522548

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Xumin Gao, Dongmei Wu, Tianlong Xie, Jialei Yuan, Mingyuan Xie, Yongjin Wang, Haitao Zhao, Gangyi Zhu, Zheng Shi. III-nitride MQW-based optoelectronic sensors for multifunctional environmental monitoring[J]. Chip, 2024, 3(4): 100113

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Paper Information

Category: Research Articles

Received: Aug. 9, 2024

Accepted: Oct. 8, 2024

Published Online: Jan. 23, 2025

The Author Email: Shi Zheng (shizheng@njupt.edu.cn)

DOI:10.1016/j.chip.2024.100113

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology