Fig. 1. Comparison of the D* of various available detectors when operated at the indicated temperature and in the region of 1−10 000 μm waveband^[4]

Fig. 2. Hybrid HgCdTe IRFPA detector with independently optimized signal detection and readout. (a) Indium column flip chip interconnection; (b) Loophole interconnection^[5]

Fig. 3. Development roadmap and memorabilia for the first generation to the fourth generation of infrared detectors^[4]

Fig. 4. H2 RG 2 048×2 048 HgCdTe FPA detector^[6]

Fig. 5. 2 048×2 048 HgCdTe FPA used in the Space Telescope Near Infrared Camera^[6]

Fig. 6. Quantum efficiency of the H2 RG 2 048×2 048 HgCdTe FPA with 0.8-1.7 μm cutoff which CdZnTe substrate was removed^[7]

Fig. 7. Euclid focal plane assembly with 16 H2 RG FPA （2048×2048） (a) and the measured quantum efficiencies (b)^[7]

Fig. 8. H4 RG 4 096×4 096 HgCdTe FPA assembly^[8]

Fig. 9. (a) Cross-section of Raytheon’s single-mesa dual-band pixel architecture applied to HgCdTe on Si grown by MBE; (b) Scanning electron micrograph of dual-band pixels ^[9]

Fig. 10. Two-color HgCdTe IR detective structure on GaAs grown by MBE^[10]

Fig. 11. Two-color n-p-n HgCdTe IR detective structure on CdZnTe grown by MBE^[11]. (a) Side view; (b) Stereoscopic view

Fig. 12. (a) Energy band diagram illustrating the dark current mechanisms for a HgCdTe p-n junction^[12]; (b) Energy band diagrams of HgCdTe n⁺-B_n-n junction^[13]

Fig. 13. Calculated detectivity for p-on-n HgCdTe detector plotted versus operating temperature for four important wavelength regions^[14]

Fig. 14. Dark current as a function of temperature and cutoff wavelengthfor HgCdTe focal plane detector^[7]

Fig. 15. Main specifications of HOT HAWK MWIR focal plane detector operated at 155 K (a) and relationship of temperature with current density (b)^[15]

Fig. 16. Relationship between operating temperature and cooling type of HgCdTe focal plane detector in MWIR, LWIR and VLWIR ^[7]

Fig. 17. Schematic illustration of HgCdTe APDs architecture^[16]

Fig. 18. Schematic of the HDVIP structure HgCdTe APD of DRS Company^[19-20]. (a) Side view; (b) Top view

Fig. 19. Schematic of HgCdTe APDs by DRS using 2×8 HDVIP p-around-n cylindrical structure. (a) Top view; (b) Side view ^[18]

Fig. 20. DRS mini-Stirling cryocooler for the 2×8-pixel HgCdTe FPA^[18]

Fig. 21. Measurement of the DRS HgCdTe APD responsivity(a) and NEP(b) as a function of the APD bias voltage^[18]