The spectrum characteristics of gain and refractive index change of TE mode and TM mode of InGaAs/InGaAsP columnar quantum dot versus dot material components, barrier material components and aspect ratio are contrastively analyzed, and the physical mechanism are dissected. The effects of changes of dot components and barrier components on balancing gain and refractive index change and polarization are further jointly investigated, then a multi-parameter adjustment method is proposed, and the In0.97Ga0.03As/In0.76Ga0.24As0.52P0.48 quantum dot with low-polarization that balances gain and refractive index change within 1550nm communication band(1540~1560nm) is designed. Finally, the appropriate carrier concentration is selected through analysis. When the carrier concentration is 0.6×1024m-3, the overlap region area of 3dB spectrum width of TE mode and TM mode is 8.66×103nm/cm and 7.55×103nm/cm respectively, and the polarization dependence of gain and refractive index change is smaller than 3% and 10%, respectively. The research result is helpful for the optimization design of some key devices in the future all-optical network.