[1] [1] F. Machuca, Y. Sun, Z. Liu et al.. Prospect for high brightness III-nitride electron emitter［J］. J. Vacuum Science and Technol. B, 2000, 18: 3042～3046

[2] [2] Oswald H.W. Siegmund. High-performance microchannel plate detectors for UV/visible astronomy［J］. Nuclear Instruments and Methods in Physics Research A, 2004, 525: 12～16

[3] [3] O. Siegmund, J. Vallerga, J. Mcphate et al.. Development of GaN photocathodes for UV detectors［J］. Nuclear Instruments and Methods in Physics Research A, 2006, 567: 89～92

[4] [4] Zhang Yan, Chu Kaihui, Shao Xiumei et al.. GaN-based 512×1 ultroviolet linear focal plane arrays［J］. Acta Optica Sinica, 2009, 29(12): 3515～3518

[5] [5] Du Xiaoqing, Chang Benkang, Qian Yunsheng et al.. Experimental investigation of high-low-temperature two-step preparation of GaN UV photocathode material［J］. Acta Optica Sinica, 2010, 30(6): 1734～1738

[6] [6] Du Xiaoqing, Chang Benkang, Qian Yunsheng et al.. Activation technique of GaN negative electron affinity photocathode［J］. Chinese J. Lasers, 2010, 37(2): 385～388

[7] [7] Du Xiaoqing, Chang Benkang. Revision of quantum efficiency formula for negative electron affinity photocathodes［J］. Acta Physica Sinica, 2009, 58(12): 8643～8650

[8] [8] Qiao Jianliang, Chang Benkang, Du Xiaoqing et al.. Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode［J］. Acta Physica Sinica, 2010, 59(4): 2855～2859

[9] [9] E. L. Michael, L. R. Sergey. Performance and Data Sheets of Advanced Semiconductor Materials［M］. Yang Shuren, Yin Jingzhi Transl.. Beijing: Chemical Industry Press, 2003. 1～43

[10] [10] C. I. Wu, A. Kahn. Negative electron affinity and electron emission at cesiated GaN and AlN surfaces［J］. Appl. Surface Science, 2000, 162-163: 250～255

[11] [11] Du Xiaoqing, Chang Benkang. Angle-dependent X-ray photoelectron spectroscopy study of the mechanisms of “high-low temperature” activation of GaAs photocathode［J］. Applied Surface Science, 2005, 251: 267～272

[12] [12] Qiao Jianliang, Tian Si, Chang Benkang et al.. Activation mechanism of negative electron affinity GaN photocathode［J］. Acta Physica Sinica, 2009, 58(8): 5847～5851