Acta Optica Sinica, Volume. 30, Issue s1, 100103(2010)
Preparation and Photoemission Performance of Transmission-Mode GaN Ultraviolet Photocathode
As the photocathode practical application mode, transmission-type structure has important signitication for the research. A MOCVD epitaxial p-type GaN, which has sapphire substrate and AlN buffer layer, was designed as transmission-type material. This material was prepared into GaN photocathode by ultra-high vacuum surface cleaning technique and (Cs,O) activation technique. The UV spectral response of prepared GaN photocathode was measured. The testing results showed that the photocathode had obvious gate-shaped response in the transmission mode, and the maximum quantum efficiency was close to 15%. Comparing to the reflection-mode spectral response curve, the overall responses of transmission-mode were lower and long-wave response threshold moved towards shortwave. The experiment results were analyzed from photocathode material structure, epitaxial level and photocathode preparation techniques.
Get Citation
Copy Citation Text
Du Xiaoqing, Chang Benkang, Qian Yunsheng, Gao Pin, Tian Jian, Wang Xiaohui. Preparation and Photoemission Performance of Transmission-Mode GaN Ultraviolet Photocathode[J]. Acta Optica Sinica, 2010, 30(s1): 100103
Category: Materials
Received: Jun. 30, 2010
Accepted: --
Published Online: Dec. 8, 2010
The Author Email: Xiaoqing Du (duxq@cqu.edu.cn)