Fig. 1. Average range distribution curve of proton during H⁺ ion implantation with different energy

Fig. 2. (a) Proton concentration distribution curve during H⁺ ion implantation with different energy; (b) Proton concentration distribution curve depth during H⁺ ion implantation with different dose

Fig. 3. Lattice (a) local defects and (b) a large number of defect clusters produced by ion collision

Fig. 4. Epitaxial structure of VCSEL

Fig. 5. Proton implantation process diagram

Fig. 6. (a) The ombardment process and (b) the range distribution of 400 keV H⁺ ions

Fig. 7. SEM images under the injection conditions of (a) 280 keV，6×10¹⁴ cm⁻²; (b) 400 keV，2×10¹⁵ cm⁻²; (c) 320 keV，8×10¹⁴ cm⁻² and (d) 360 keV，6×10¹⁴ cm⁻²

Fig. 8. Vriation curve of resistance value with injection dose

Fig. 9. P-I-V curve and the near field distribution of VCSEL at injection parameters: 320 keV, 8×10¹⁴cm⁻²