Journal of Semiconductors, Volume. 44, Issue 4, 042301(2023)

Long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber

Shaolong Yan1,2, Jianliang Huang1,2、*, Ting Xue1,2, Yanhua Zhang1,2, and Wenquan Ma1,2、**
Author Affiliations
  • 1The Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(4)
    (Color online) (a) Schematic drawing of the epitaxy structure of the device. (b) Band structure of the EB and HB parts.
    (Color online) (a) The dark current density curves of the device at different temperatures. (b) The Arrhenius plots of the dark current density vs temperature of the device at –0.2 and –2.75 V.
    (Color online) (a) The normalized photoresponse spectra of the ICIP device at different temperatures. (b) and (c) are the peak responsivity of the ICIP device vs bias voltage at different temperature ranges.
    (Color online) (a) The peak responsivity, the QE and the D* of the detector at different temperatures. (b) The D* spectra at four different temperatures.
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    Shaolong Yan, Jianliang Huang, Ting Xue, Yanhua Zhang, Wenquan Ma. Long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber[J]. Journal of Semiconductors, 2023, 44(4): 042301

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    Paper Information

    Category: Articles

    Received: Oct. 19, 2022

    Accepted: --

    Published Online: Apr. 24, 2023

    The Author Email: Huang Jianliang (jlhuang@semi.ac.cn), Ma Wenquan (wqma@semi.ac.cn)

    DOI:10.1088/1674-4926/44/4/042301

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