Researching | New Type of Triangular Defects in 4HSiC 4° OffAxis Homoepitaxial Layers

Journal of Synthetic Crystals, Volume. 49, Issue 11, 2206(2020)

New Type of Triangular Defects in 4HSiC 4° OffAxis Homoepitaxial Layers

HU Jichao1,*... WANG Xi1, JIA Renxu2, PU Hongbin1 and CHEN Zhiming1 |Show fewer author(s)

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HU Jichao, WANG Xi, JIA Renxu, PU Hongbin, CHEN Zhiming. New Type of Triangular Defects in 4HSiC 4° OffAxis Homoepitaxial Layers[J]. Journal of Synthetic Crystals, 2020, 49(11): 2206

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Received: --

Accepted: --

Published Online: Jan. 26, 2021

The Author Email: Jichao HU (jchu@xaut.edu.cn)

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Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology