Optoelectronics Letters, Volume. 17, Issue 11, 673(2021)

Study on thickness uniformity of Ta2O5 film evaporated on the inner-face of a hemispherical substrate

Lingmao XU... Yanchun HE, Kun LI, Hui ZHOU* and Yuqing XIONG |Show fewer author(s)
Author Affiliations
  • Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730001, China
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    Theoretical analysis and experimental study on the thickness distribution of Ta2O5 film evaporated on the inner-face of a hemispherical substrate are demonstrated. It is derived that the value of n/R and L/R influence the film thickness distribution (where R is the radius of the hemisphere, n and L are the horizontal distance and vertical height between the evaporation source and the center of the hemisphere, respectively). The whole hemispherical substrate can be coated when n≤L+R, otherwise there is a “blind area” on the substrate when the substrate is self-rotating. A hemispherical composite substrate with a radius of 200 mm is coated with Ta2O5 protective film under a certain configuration, the thickness of Ta2O5 film at the edge is 0.372 times the film at the vertex which shows that the evaporation characteristics of Ta2O5 tend to be a point source.

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    XU Lingmao, HE Yanchun, LI Kun, ZHOU Hui, XIONG Yuqing. Study on thickness uniformity of Ta2O5 film evaporated on the inner-face of a hemispherical substrate[J]. Optoelectronics Letters, 2021, 17(11): 673

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    Paper Information

    Received: Mar. 25, 2021

    Accepted: Jun. 6, 2021

    Published Online: Jan. 10, 2022

    The Author Email: Hui ZHOU (zhouhui510@sina.com)

    DOI:10.1007/s11801-021-1040-3

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