Lead selenide colloidal quantum dots (PbSe QDs) have huge application prospects in room temperature infrared optoelectronic devices due to their excellent properties such as enhanced multiple exciton generation, large exciton Bohr radius, wide range of the tunable wavelength, and high photoluminescence quantum yield. However, the problems of poor photoluminescence stability and low efficiency of PbSe QDs synthesized via the solution method further limit their development owing to the oxidation of quantum dot surfaces and poor carrier transport performance. Therefore, a systematic discussion of the effects of the surface modification engineering of PbSe QDs on its mobility, trap states, energy level shift, photoluminescence efficiency, and stability modification is presented in this paper. Additionally, a summary of the application of surface modification engineering in PbSe QDs solar cells, light-emitting diodes, and photodetectors is provided. Finally, the problems existing in the practical application of optoelectronic devices and future research directions are outlined.