Journal of Inorganic Materials, Volume. 35, Issue 5, 561(2020)
Figures & Tables(7)
1. Schematic of the fabrication process of nanostructured LED chip
2. SEM images of the AAO membrane which pore widening by increasing etching time and calculated scale distribution of the pore diameter in (a1-a4)
3. Curve of the pore diameter with the etching time (a) and curve of the etching rate with the pore diameter (b)
5. PL spectra of nanostructured LEDs with different pore diameter (a) and different depths (b)
Table 1. Parameters of the ICP etching
View tableView in ArticleTable 1. Parameters of the ICP etching
Materials Gas flow/sccm Pressure/Pa Power/W Time/s Al2O3 BCl3 40 1.0664 400 240 Ar 10 GaN BCl3 20 0.5332 550 25 Cl2 30
Table 2. Statistics of pore diameter and etching rate with ICP etching for different durations
View tableView in ArticleTable 2. Statistics of pore diameter and etching rate with ICP etching for different durations
t /sD /nmV /(nm·s-1)0 251.37 0.141 30 259.85 0.159 60 270.48 0.199 90 283.70 0.255 120 301.12 0.313 150 321.28 0.368 180 345.29 0.426 210 372.45 0.476 240 402.45 0.500 270 432.53 0.501
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Xue ZHENG, Rui JIANG, Qian LI, Weizhe WANG, Zhimou XU, Jing PENG.
Paper Information
Category: RESEARCH PAPER
Received: May. 24, 2019
Accepted: --
Published Online: Mar. 1, 2021
The Author Email: XU Zhimou (xuzhimou@mail.hust.edu.cn)
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