Effect of Antisite Defects on Photoelectric Properties of K<sub>2</sub>CsSb Photocathode

Zhaoxin Shu; Yijun Zhang; Xingchao Wang; Muchun Jin; Ling Ren; Kaimin Zhang; Jingjing Zhan

doi:10.3788/AOS202141.1216001

Acta Optica Sinica, Volume. 41, Issue 12, 1216001(2021)

Effect of Antisite Defects on Photoelectric Properties of K₂CsSb Photocathode

Zhaoxin Shu¹, Yijun Zhang^1、*, Xingchao Wang², Muchun Jin², Ling Ren^2,3, Kaimin Zhang¹, and Jingjing Zhan¹

¹School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China

²North Night Vision Technology Co., Ltd., Nanjing, Jiangsu 211106, China

³Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an, Shaanxi 710065, China

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Figures & Tables(8)

Fig. 1. Antisite defect models of K₂CsSb. (a) K_1.75Cs_1.25Sb; (b) K_2.25Cs_0.75Sb; (c) K_1.75CsSb_1.25; (d) K₂Cs_0.75Sb_1.25; (e) K₂Cs_1.25Sb_0.75; (f) K_2.25CsSb_0.75

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Fig. 2. Band structures of antisite defect models of K₂CsSb. (a) K_1.75Cs_1.25Sb; (b) K_2.25Cs_0.75Sb; (c) K_1.75CsSb_1.25; (d) K₂Cs_0.75Sb_1.25; (e) K₂Cs_1.25Sb_0.75; (f) K_2.25CsSb_0.75

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Fig. 3. Total densities of states of pristine model and antisite defect models of K₂CsSb

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Fig. 4. Partial densities of states of pristine model of K₂CsSb. (a) TDOS; (b) PDOS of Cs; (c) PDOS of K; (d) PDOS of Sb

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$Refractive index and extinction coefficient of pristine model and antisite defect models of K2CsSb. (a) Refractive index; (b) extinction coefficient$

Fig. 5. Refractive index and extinction coefficient of pristine model and antisite defect models of K₂CsSb. (a) Refractive index; (b) extinction coefficient

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Fig. 6. Absorption coefficient of pristine model and antisite defect models of K₂CsSb

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Table 1. Calculated band gap width of pristine model and antisite defect models with direct band gap
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Table 1. Calculated band gap width of pristine model and antisite defect models with direct band gap
Model K₂CsSb K_1.75Cs_1.25Sb K_2.25Cs_0.75Sb K₂Cs_0.75Sb_1.25
Band gap width /eV 0.928 0.818 0.697 0.233

Table 2. Formation energy and formation enthalpy of antisite defect models
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Table 2. Formation energy and formation enthalpy of antisite defect models
Model K₂CsSb K_1.75Cs_1.25Sb K_2.25Cs_0.75Sb K_1.75CsSb_1.25 K₂Cs_0.75Sb_1.25 K₂Cs_1.25Sb_0.75 K_2.25CsSb_0.75
Formation energy /eV — 0.45 -0.20 -1.31 -1.87 7.65 6.71
Formation enthalpy /eV -2.09 -2.06 -2.11 -2.18 -2.22 -1.60 -1.66

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Zhaoxin Shu, Yijun Zhang, Xingchao Wang, Muchun Jin, Ling Ren, Kaimin Zhang, Jingjing Zhan. Effect of Antisite Defects on Photoelectric Properties of K₂CsSb Photocathode[J]. Acta Optica Sinica, 2021, 41(12): 1216001

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