Fig. 1. (a) Schematic diagram of sample structure, (b) microscope photograph of Hall bar device (120 μm × 10 μm), (c) x-ray diffraction spectrum of the Co₂MnSi (0.7 nm)/L1₀–MnGa (3 nm)/Pt (3 nm) structure, and (d) fitted peaks of Pt (002) and MnGa (002) of the Co₂MnSi (0.7 nm)/L1₀–MnGa (3 nm)/Pt (3 nm) structure, with black, red, pink, and blue curves representing the experimental data, fitted sum of peaks, fitted Pt (002) peak, and fitted MnGa (002) peak, respectively.

Fig. 2. (a) R_AH loop and (b) out-of-plane magnetic hysteresis loop at room temperature of sample R. (c) R_AH loops of sample A at different temperatures. (d) Plots of temperature-dependent coercivity and out-of-plane remnant magnetization of sample A. (e) Plot of temperature-dependent out-of-plane remnant magnetization of sample A. (f) Remnant Hall resistance varying with temperature of sample A, showing opposite magnetic configurations in the process of temperature changing. (g) Schematic diagrams of the magnetic moment states at points A, B, C and D of (e) with “↑” and “↓” representing the magnetic moments parallel and antiparallel to the positive direction separately.

Fig. 3. R_AH loop at (a) 280 K and (b) 240 K and SOT-induced switching loop at (c) 280 K and (d) 240 K, of sample B (Co₂MnSi (0.7 nm)/L1₀–MnGa (3 nm)/Pt (5 nm)).