Fig. 1. Crystal structure of VO₂: (a) M phase; (b) R phase. VO₂晶体结构图^[32] 　(a) M相; (b) R相

Fig. 2. Changes of currents by application ofthe electric field to VO₂ thin films^[8]. 电场作用下VO₂薄膜中的电流变化曲线^[8]

Fig. 3. Diagram of VO₂ device structure: (a) Planar structure^[36]; (b) three-terminal gated field effect switches^[7]; (c) layered structure^[45]. VO₂器件结构示意图　(a)平面结构^[36]; (b)三端场效应管结构^[7]; (c)三明治结构^[45]

Fig. 4. Schematic of quantum well structure (inset shows a capacitance device model for the quantum well structure)^[46]. 量子阱结构示意图(内嵌图为量子阱结构的电容器件模型^[46]

Fig. 5. Response curve of short pulse^[36]. 短脉冲响应曲线^[36]

Fig. 6. (a) Sawyer-Tower test circuit; (b) peak current as a function of square wave pulse voltage (the inset illustrates voltage and current curves using applied switching pulses of 7 V and 10 V)^[47]. (a) Sawyer-Tower测试电路; (b)方波脉冲电压与峰值电流关系图(内嵌图为加载7 V和10 V开关电压时的电压和电流曲线)^[47]

Fig. 7. MIT electric field curve controlled by temperature for VO₂ thin film (the electrode spacing is 5 mm) ^[60]. VO₂薄膜温度调控相变电场曲线图(电极间距5 mm)^[60]

Fig. 8. MIT temperature curve controlled by electric field intensity^[60]. 电场强度调控相变温度的关系图^[60]

Fig. 9. (a) VO₂ nanofibers; (b) test device; (c) curve of temperature response.^[64](a) VO₂纳米纤维; (b)测试器件; (c)温度响应曲线^[64]