Journal of Semiconductors, Volume. 45, Issue 10, 102301(2024)
Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors
Figures & Tables(4)
Fig. 1. (Color online) The ultraviolet photoelectron spectroscopy of (a) IZO1:3 and (b) IZO1:1 films. (c) Tauc plots for extracting the values of energy gap. (d) Band diagrams and energy level offset of IZO1:1 and IZO1:3. (e) Schematic cross-section of the heterojunction EMMO TFT.
Fig. 2. (Color online) (a) The transfer characteristics and (b) linear field-effect mobility versus VG plot of IZO1:1, IZO1:3, and heterojunction TFT.
Fig. 3. (Color online) (a) C−V curve of MIS structure and (b) electron concentration (NC−V) as a function of the heterojunction depth (X).
Fig. 4. (Color online) (a) The transfer characteristics and (b) linear field-effect mobility versus VG plot of the heterojunction and inverted heterojunction TFT. Energy band diagrams with 3-dimensional views in the (c) heterojunction channel and (d) inverted heterojunction channel operated at LV. (e) Energy band diagrams with 3-dimensional views in the heterojunction channel operated at HV (over 24 V).
Tools
Get Citation
Copy Citation Text
Xiao Li, Zhikang Ma, Jinxiong Li, Wengao Pan, Congwei Liao, Shengdong Zhang, Zhuo Gao, Dong Fu, Lei Lu. Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors[J]. Journal of Semiconductors, 2024, 45(10): 102301
Paper Information
Category: Research Articles
Received: Apr. 11, 2024
Accepted: --
Published Online: Dec. 5, 2024
The Author Email: Lu Lei (LLu)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20