Acta Photonica Sinica, Volume. 45, Issue 1, 131001(2016)
The Characteristic of Connecting Layer Material on TeO2 Crystal Surface by Thermal Stress Method
References(4)
[2] [2] CHUNG H, AMOILD M A. Near-infrared spectroscopy for monitoring starch hydrolysis［J］. Applied Spectroscopy, 2000, 54: 277-283 .
[3] [3] AHMED M M, HOGARTH C A, KHAN M N. A study of GeO2-TeO2 glass system［J］. Journal of Materials Science, 1984, 19(2): 4040-4044.
[7] [7] HSUEH C H.Thermal stress in elastic multilayer systems［J］. Thin Solid Film, 2002, 418: 182-188.
[13] [13] MOORE T D, JARVIS J L. The peeling moment-a key rule for delamination resistance in IC assemblies.ASME ［J］. Electron packaging 2004, 126(1): 106-109.
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FU Xiu-hua, PAN Yong-gang, DONG Jun, LIU Dong-mei, ZHANG Jing. The Characteristic of Connecting Layer Material on TeO2 Crystal Surface by Thermal Stress Method[J]. Acta Photonica Sinica, 2016, 45(1): 131001
Paper Information
Received: Jun. 25, 2015
Accepted: --
Published Online: Mar. 22, 2016
The Author Email: Xiu-hua FU (goptics@126.com)
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