Acta Photonica Sinica, Volume. 45, Issue 1, 131001(2016)
The Characteristic of Connecting Layer Material on TeO2 Crystal Surface by Thermal Stress Method
The ultra-broad band anti-reflection film of 1300~3400nm waveband was designed and fabricated on TeO2 acousto-optic crystal. Starting the theory of thermal stress of thin film with the properties of TeO2,the stress diagrammatic sketch of thin film was established.Combing the properties of TeO2 crystal with torque determination method, the thermal expansion coefficient and Young’s modulus of the thin film materials were analyzed by analytical method of reverse calculation.The experiments show that the adhesion is better prepared under the same process conditions by using connecting layer. The film is protected from the problem of stripping and meets the corresponding requirements of adhesion test.
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FU Xiu-hua, PAN Yong-gang, DONG Jun, LIU Dong-mei, ZHANG Jing. The Characteristic of Connecting Layer Material on TeO2 Crystal Surface by Thermal Stress Method[J]. Acta Photonica Sinica, 2016, 45(1): 131001
Received: Jun. 25, 2015
Accepted: --
Published Online: Mar. 22, 2016
The Author Email: Xiu-hua FU (goptics@126.com)