Fig. 1. Structure and electronic transport of the wafer-bonded Si/Si p-n structure

Fig. 2. Effect of d on the dark current of the Si/Si p-n junction

Fig. 3. Effect of d on the carrier tunneling rate at Si/Si bonded interface

Fig. 4. Effect of d on the recombination in the Si/Si p-n junction

Fig. 5. Effect of d on the carrier concentration in the Si/Si p-n junction (x represents the value of Y axis)

Fig. 6. Effect of d on the electric field in the Si/Si p-n junction

Fig. 7. Effect of d on the carrier velocity in the Si/Si p-n junction

Fig. 8. Effect of d on the energy band in the Si/Si p-n junction

Fig. 9. Effect of d on the charge concentration in the Si/Si p-n junction

Fig. 10. Effect of d and bias on the 3dB bandwidth of the Si/Si p-n junction

Fig. 11. Effect of the bias on the electric field in the Si/Si p-n junction

Fig. 12. Effect of the bias on the carrier velocity in the Si/Si p-n junction

Fig. 13. Effect of d on the spectrum response and total current of the Si/Si p-n junction