Acta Photonica Sinica, Volume. 46, Issue 8, 816003(2017)

Thermal Stability of Mid-infrared SiO2 Thin Films Deposited by Dual Ion Beam Sputtering Method

SHANG Peng1,2、*, JI Yi-qin1, ZHAO Dao-ling3, XIONG Sheng-ming4, LIU Hua-song, LI Ling-hui4, and TIAN Dong4
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    SiO2 films are deposited on Si and sapphire (α-Al2O3) substrates by Dual Ion beam sputtering method. The microstructure, surface morphology,residual stress and optical stability of SiO2 coating in the wavelength of 0.4~1.2 μm and 3~5 μm are investigated, systematically. The results indicate that the residual stress goes through a local minimum value at ~400 ℃. There is a close relationship between the optical constant and the surface conditions, residual stress, microstructure of SiO2 film. As the temperature increases up to 1 000 ℃, SiO2 film can keep well thermal stability without notable damage morphology. The result can give some guidance for designing the optical coatings used in harsh environments.

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    SHANG Peng, JI Yi-qin, ZHAO Dao-ling, XIONG Sheng-ming, LIU Hua-song, LI Ling-hui, TIAN Dong. Thermal Stability of Mid-infrared SiO2 Thin Films Deposited by Dual Ion Beam Sputtering Method[J]. Acta Photonica Sinica, 2017, 46(8): 816003

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    Paper Information

    Received: Jan. 21, 2017

    Accepted: --

    Published Online: Oct. 30, 2017

    The Author Email: Peng SHANG (shangpeng163@163.com)

    DOI:10.3788/gzxb20174608.0816003

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