Laser Journal, Volume. 45, Issue 3, 30(2024)

Development of a non-destructive testing system for the irradiation resistance of semiconductor lasers

WANG Shuangzheng1,2、*, CAO Junsheng1, YU Songqun1, and GAO Zhijian1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(5)

    [6] [6] Hui Z , Liu K , Cong X , et al. The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes[J] . Microelectronics Reliability , 2015 , 55(1) :62- 65.

    [8] [8] Yun L , Zhao S , Yang S , et al. Markov process based relia- bility model for laser diodes in space radiation environment[J] . Microelectronics Reliability , 2014 , 54 ( 12) :2735 - 2739.

    [9] [9] Jiawei S , Enshun J , Hongyan L , et al. The characteristic junction parameter of a semiconductor laser and its relation with reliability[J] . Optical & Quantum Electronics , 1996 , 28(6) :647-651.

    [10] [10] Jiawei S , Enshun J , Dingsan G. The junction voltage satu- ration and reliability of semiconductor lasers[J] . Optical & Quantum Electronics , 1992 , 24(7) :775-781.

    [11] [11] Shi J , Jin E , Jing M , et al. b and its temperature depend- ence are the important criteria of the reliability of semicon- ductor lasers [ J ] . Microelectronics Reliability , 1994 , 34(8) :1405- 1408.

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    WANG Shuangzheng, CAO Junsheng, YU Songqun, GAO Zhijian. Development of a non-destructive testing system for the irradiation resistance of semiconductor lasers[J]. Laser Journal, 2024, 45(3): 30

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    Paper Information

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    Received: Sep. 16, 2023

    Accepted: --

    Published Online: Oct. 15, 2024

    The Author Email: Shuangzheng WANG (1098295892@qq.com)

    DOI:10.14016/j.cnki.jgzz.2024.03.030

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