Fig. 1. Influence of base region on breakdown characteristics of high voltage SiC DSRD devices

Fig. 2. Influence of base region on dynamic characteristics of high voltage SiC DSRD Devices

Fig. 3. Schematic of the structure of a high-voltage SiC DSRD device

Fig. 4. Simulation of breakdown characteristics of high-voltage SiC DSRD devices

Fig. 5. High voltage SiC DSRD equivalent model

Fig. 6. High voltage DSRD pulse source simulation circuit

Fig. 7. The influence of different MOS transistor driving time on the load output pulse

Fig. 8. The effect of the capacitance value of capacitor C₁ on the circuit

Fig. 9. Influence of DC voltage source V₁ on output pulse（V₂=60 V）

Fig. 10. Output characteristics of pulse source circuit based on high voltage SiC DSRD model