Fig. 1. Scheme illustration of the epitaxial material junction and the cross-section profile of the photodetector

Fig. 2. p-n junction depth of epitaxial layer by SCM. (a) 520 ℃，9 min; (b) 530 ℃，9 min; (c) 530 ℃，10 min

Fig. 3. Under different SRH lifetimes，(a) relationship between minority carrier lifetime and doping concentration of absorption layer，(b) relationship between minority carrier diffusion length and doping concentration of absorption layer

Fig. 4. Decay curve of μ-PCD signal for the sample

Fig. 5. Photograph of scan signal by LBIC. (a) 15 μm pitch; (b) 30 μm pitch

Fig. 6. Response profile of scan signal by LBIC. (a) 15 μm pitch; (b) 30 μm pitch

Fig. 7. Induced signal decay from the edge of the junction and its exponential fit. (a) 15 μm pitch; (b) 30 μm pitch

Fig. 8. Dark current density curves ranging from 260 K to 300 K for the detector

Fig. 9. Relationship between 1 000/T and ln(J_d ) of the detector at −0.1 V

Fig. 10. Dark current density curves measured and component of dark current fitted at 300 K for the detector