Photonics Research, Volume. 3, Issue 1, 1(2015)
Near-infrared metal-semiconductor-metal photodetector based on semi-insulating GaAs and interdigital electrodes
Fig. 1. (a) Schematic of device showing two electrodes (gold) with channels between the interdigital fingers (black). Diagram also shows transverse,
Fig. 2. (a)
Fig. 3. (a) Spectral response spectra for transverse polarization as function of electrode spacing,
Fig. 4. (a) Measured spectral response of a 5 μm device for transverse and longitudinal polarization; (b) calculated optical enhancement near the electrode edge for transverse polarization; (c) calculated optical enhancement near the electrode edge for longitudinal polarization; (d) polarization-dependent normalized spectral response measurements (squares) and normalized photocurrent calculations (circles) with a
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A. I. Nusir, A. M. Hil, M. O. Manasreh, and J. B. Herzog. Near-infrared metal-semiconductor-metal photodetector based on semi-insulating GaAs and interdigital electrodes[J]. Photonics Research, 2015, 3(1): 1
Category: Photodetectors
Received: Nov. 19, 2014
Accepted: Nov. 24, 2014
Published Online: Apr. 15, 2015
The Author Email: A. I. Nusir (ainusir@email.uark.edu)