Fabrication of resistive memory devices based on graphene oxide

Min CHEN; Qiming ZHANG

doi:10.3969/j.issn.1005-5630.2022.006.002

Optical Instruments, Volume. 44, Issue 6, 8(2022)

Fabrication of resistive memory devices based on graphene oxide

Min CHEN1...2 and Qiming ZHANG12,* |Show fewer author(s)

Author Affiliations

¹Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China

²School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China

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Figures & Tables(6)

Fig. 1. The Raman spectra of GO and rGO

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Fig. 2. Comparison of the morphology of GO and rGO

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Fig. 3. The XPS image of GO and rGO

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Fig. 4. A side view SEM image of GO

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Fig. 5. Image of the structure of RRAM

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Fig. 6. The I-V curve of RRAM device

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Min CHEN, Qiming ZHANG. Fabrication of resistive memory devices based on graphene oxide[J]. Optical Instruments, 2022, 44(6): 8

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Paper Information

Category: APPLICATION TECHNOLOGY

Received: Mar. 3, 2022

Accepted: Mar. 31, 2022

Published Online: Jan. 11, 2023

The Author Email: ZHANG Qiming (qimingzhang@usst.edu.cn)

DOI:10.3969/j.issn.1005-5630.2022.006.002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

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